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1 Ergebnisse
1
High-Performance CVD MoS2 Transistors with Self-Aligned Top..:
, In:
2021 IEEE International Electron Devices Meeting (IEDM)
,
Li, Weisheng
;
Fan, Dongxu
;
Shao, Liangwei
... - p. 37.3.1-37.3.4 , 2021
Link:
https://doi.org/10.1109/IEDM19574.2021.9720595
RT T1
2021 IEEE International Electron Devices Meeting (IEDM)
: T1
High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact
UL https://suche.suub.uni-bremen.de/peid=ieee-9720595&Exemplar=1&LAN=DE A1 Li, Weisheng A1 Fan, Dongxu A1 Shao, Liangwei A1 Huang, Futao A1 Liang, Lei A1 Li, Taotao A1 Xu, Yifei A1 Tu, Xuecou A1 Wang, Peng A1 Yu, Zhihao A1 Shi, Yi A1 Qiu, Hao A1 Wang, Xinran YR 2021 SN 2156-017X K1 Integrated circuits K1 Scalability K1 Field effect transistors K1 Schottky barriers K1 Logic gates K1 Contact resistance K1 Ohmic contacts SP 37.3.1 OP 37.3.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19574.2021.9720595 DO https://doi.org/10.1109/IEDM19574.2021.9720595 SF ELIB - SuUB Bremen
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