I agree that this site is using cookies. You can find further informations here.
X
Merkliste 
 1 Ergebnisse 
 
1

A Novel High-Endurance FeFET Memory Device Based on ZrO2 An..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Liang, Zhongxin ; Tang, Kechao ; Dong, Junchen... - p. 17.3.1-17.3.4 , 2021
Link: https://doi.org/10.1109/IEDM19574.2021.9720627