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Toward High Performance 4H-SiC MOSFETs Using Low Temperatur..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Wang, Menghua ; Yang, Mingchao ; Liu, Weihua... - p. 36.2.1-36.2.4 , 2021
Link: https://doi.org/10.1109/IEDM19574.2021.9720636