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1 Ergebnisse
1
High-Peformance BEOL-Compatible Atomic-Layer-Deposited In2O..:
, In:
2021 IEEE International Electron Devices Meeting (IEDM)
,
Lin, Z.
;
Si, M.
;
Luo, Y.-C.
... - p. 17.4.1-17.4.4 , 2021
Link:
https://doi.org/10.1109/IEDM19574.2021.9720652
RT T1 <cTitle>2021 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>High-Peformance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with Large Memory Window of 2.2 V, Long Retention > 10 years and High Endurance > 108 Cycles</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9720652&Exemplar=1&LAN=DE A1 Lin, Z. A1 Si, M. A1 Luo, Y.-C. A1 Lyu, X. A1 Charnas, A. A1 Chen, Z. A1 Yu, Z. A1 Tsai, W. A1 McIntyre, P. C. A1 Kanjolia, R. A1 Moinpour, M. A1 Yu, S. A1 Ye, P. D. YR 2021 SN 2156-017X K1 Performance evaluation K1 Zirconium K1 Photonic band gap K1 Nonvolatile memory K1 Atomic layer deposition K1 Memory management K1 Random access memory SP 17.4.1 OP 17.4.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19574.2021.9720652 DO https://doi.org/10.1109/IEDM19574.2021.9720652 SF ELIB - SuUB Bremen
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