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1 Ergebnisse
1
High Performance 4nm FinFET Platform (4LPE) with Novel Adva..:
, In:
2021 IEEE International Electron Devices Meeting (IEDM)
,
Yasuda-Masuoka, Yuri
;
Jeong, Jaehun
;
Son, Kihwang
... - p. 13.3.1-13.3.4 , 2021
Link:
https://doi.org/10.1109/IEDM19574.2021.9720656
RT T1 <cTitle>2021 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>High Performance 4nm FinFET Platform (4LPE) with Novel Advanced Transistor Level DTCO for Dual-CPP/HP-HD Standard Cells</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9720656&Exemplar=1&LAN=DE A1 Yasuda-Masuoka, Yuri A1 Jeong, Jaehun A1 Son, Kihwang A1 Lee, SeungWook A1 Park, Seulki A1 Lee, Youngho A1 Youn Kim, Ju A1 Lee, Jaeho A1 Cho, Moongi A1 Lee, Sihyung A1 Hong, Soohun A1 Hong, Heebum A1 Jung, Younghun A1 Yoon, Changkeun A1 Ko, Yonghyun A1 Jung, Kyunghoon A1 Myung, Taehun A1 Youn, Jong Mil A1 Jeong, Gitae YR 2021 SN 2156-017X K1 Performance evaluation K1 Layout K1 Random access memory K1 Production K1 Logic gates K1 FinFETs K1 Market research SP 13.3.1 OP 13.3.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19574.2021.9720656 DO https://doi.org/10.1109/IEDM19574.2021.9720656 SF ELIB - SuUB Bremen
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