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1 Ergebnisse
1
Understanding and modelling the PBTI reliability of thin-fi..:
, In:
2021 IEEE International Electron Devices Meeting (IEDM)
,
Chasin, A.
;
Franco, J.
;
Triantopoulos, K.
... - p. 31.1.1-31.1.4 , 2021
Link:
https://doi.org/10.1109/IEDM19574.2021.9720666
RT T1 <cTitle>2021 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>Understanding and modelling the PBTI reliability of thin-film IGZO transistors</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9720666&Exemplar=1&LAN=DE A1 Chasin, A. A1 Franco, J. A1 Triantopoulos, K. A1 Dekkers, H. A1 Rassoul, N. A1 Belmonte, A. A1 Smets, Q. A1 Subhechha, S. A1 Claes, D. A1 van Setten, M. J. A1 Mitard, J. A1 Delhougne, R. A1 Afanas'ev, V. A1 Kaczer, B. A1 Kar, G. S. YR 2021 SN 2156-017X K1 Degradation K1 Temperature measurement K1 Voltage measurement K1 Hydrogen K1 Logic gates K1 Kinetic theory K1 Thin film transistors SP 31.1.1 OP 31.1.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19574.2021.9720666 DO https://doi.org/10.1109/IEDM19574.2021.9720666 SF ELIB - SuUB Bremen
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