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1.2 kV GaN/SiC-based Hybrid High Electron Mobility Transist..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Nakajima, A. ; Hirai, H. ; Miura, Y.. - p. 36.5.1-36.5.4 , 2021
Link: https://doi.org/10.1109/IEDM19574.2021.9720673