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Gate Oxide Instability against a Wide Range of Negative Ele..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Noguchi, M. ; Koyama, A. ; Iwamatsu, T... - p. 36.3.1-36.3.4 , 2021
Link: https://doi.org/10.1109/IEDM19574.2021.9720679