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1 Ergebnisse
1
Novel Vertical Channel-All-Around(CAA) IGZO FETs for $2\mat..:
, In:
2021 IEEE International Electron Devices Meeting (IEDM)
,
Duan, Xinlv
;
Huang, Kailiang
;
Feng, Junxiao
... - p. 10.5.1-10.5.4 , 2021
Link:
https://doi.org/10.1109/IEDM19574.2021.9720682
RT T1 <cTitle>2021 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>Novel Vertical Channel-All-Around(CAA) IGZO FETs for $2\mathrm{T}0\mathrm{C}$ DRAM with High Density beyond 4F2 by Monolithic Stacking</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9720682&Exemplar=1&LAN=DE A1 Duan, Xinlv A1 Huang, Kailiang A1 Feng, Junxiao A1 Niu, Jiebin A1 Qin, Haibo A1 Yin, Shihui A1 Jiao, Guangfan A1 Leonelli, Daniele A1 Zhao, Xiaoxuan A1 Jing, Weiliang A1 Wang, Zhengbo A1 Chen, Qian A1 Chuai, Xichen A1 Lu, Congyan A1 Wang, Wenwu A1 Yang, Guanhua A1 Geng, Di A1 Li, Ling A1 Liu, Ming YR 2021 SN 2156-017X K1 Performance evaluation K1 Electric potential K1 Atomic layer deposition K1 Stacking K1 Field effect transistors K1 Random access memory K1 Logic gates SP 10.5.1 OP 10.5.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19574.2021.9720682 DO https://doi.org/10.1109/IEDM19574.2021.9720682 SF ELIB - SuUB Bremen
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