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1 Ergebnisse
1
Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm2 channel ca..:
, In:
2021 IEEE International Electron Devices Meeting (IEDM)
,
Wu, Xiangyu
;
Cott, Daire
;
Lin, Zaoyang
... - p. 7.4.1-7.4.4 , 2021
Link:
https://doi.org/10.1109/IEDM19574.2021.9720695
RT T1
2021 IEEE International Electron Devices Meeting (IEDM)
: T1
Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm2 channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm Lg
UL https://suche.suub.uni-bremen.de/peid=ieee-9720695&Exemplar=1&LAN=DE A1 Wu, Xiangyu A1 Cott, Daire A1 Lin, Zaoyang A1 Shi, Yuanyuan A1 Groven, Benjamin A1 Morin, Pierre A1 Verreck, Devin A1 Smets, Quentin A1 Medina, Henry A1 Sutar, Surajit A1 Asselberghs, Inge A1 Radu, Iuliana A1 Lin, Dennis YR 2021 SN 2156-017X K1 MOSFET K1 Logic gates K1 Capacitance K1 Hafnium compounds K1 Sulfur K1 Transistors K1 Molybdenum SP 7.4.1 OP 7.4.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19574.2021.9720695 DO https://doi.org/10.1109/IEDM19574.2021.9720695 SF ELIB - SuUB Bremen
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