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1 Ergebnisse
1
Optimizing AsSeGe Chalcogenides by Dopants for Extremely Lo..:
, In:
2021 IEEE International Electron Devices Meeting (IEDM)
,
Cheng, H. Y.
;
Chien, W C.
;
Kuo, I. T.
... - p. 28.6.1-28.6.4 , 2021
Link:
https://doi.org/10.1109/IEDM19574.2021.9720704
RT T1 <cTitle>2021 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint Memory</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9720704&Exemplar=1&LAN=DE A1 Cheng, H. Y. A1 Chien, W C. A1 Kuo, I. T. A1 Yang, C. H. A1 Chou, Y. C. A1 Bruce, R. L. A1 Lai, E. K. A1 Daudelin, D. A1 Yeh, C. W. A1 Gignac, L. A1 Cheng, C. W. A1 Grun, A. A1 Lavoie, C. A1 Gong, N. A1 Buzi, L. A1 Ho, H. Y. A1 Ray, A. A1 Utomo, H. A1 BrightSky, M. A1 Lung, H. L. YR 2021 SN 2156-017X K1 Phase change materials K1 Three-dimensional displays K1 Doping K1 Threshold voltage K1 Silicon K1 Video recording K1 Thermal stability SP 28.6.1 OP 28.6.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19574.2021.9720704 DO https://doi.org/10.1109/IEDM19574.2021.9720704 SF ELIB - SuUB Bremen
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