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1 Ergebnisse
1
Advanced Scaling of Enhancement Mode High-K Gallium Nitride..:
, In:
2021 IEEE International Electron Devices Meeting (IEDM)
,
Then, Han Wui
;
Radosavljevic, M.
;
Koirala, P.
... - p. 11.1.1-11.1.4 , 2021
Link:
https://doi.org/10.1109/IEDM19574.2021.9720710
RT T1 <cTitle>2021 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9720710&Exemplar=1&LAN=DE A1 Then, Han Wui A1 Radosavljevic, M. A1 Koirala, P. A1 Thomas, N. A1 Nair, N. A1 Ban, I. A1 Talukdar, T. A1 Nordeen, P. A1 Ghosh, S. A1 Bader, S. A1 Hoff, T. A1 Michaelos, T. A1 Nahm, R. A1 Beumer, M. A1 Desai, N. A1 Wallace, P. A1 Hadagali, V. A1 Vora, H. A1 Oni, A. A1 Weng, X. A1 Joshi, K. A1 Meric, I. A1 Nieva, C. A1 Rami, S. A1 Fischer, P. YR 2021 SN 2156-017X K1 Industries K1 Radio frequency K1 Three-dimensional displays K1 Logic gates K1 FinFETs K1 Silicon K1 Inverters SP 11.1.1 OP 11.1.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19574.2021.9720710 DO https://doi.org/10.1109/IEDM19574.2021.9720710 SF ELIB - SuUB Bremen
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