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A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exp..:

, In: 2022 IEEE International Solid-State Circuits Conference (ISSCC),

Kim, Dae-Hyun ; Song, Byungkyu ; Ahn, Hyun-a... - p. 448-450 , 2022

Link: https://doi.org/10.1109/ISSCC42614.2022.9731537

RT 
T1 <cTitle>2022 IEEE International Solid-State Circuits Conference (ISSCC)</cTitle>: T1 <Title>A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9731537&Exemplar=1&LAN=DE
				
A1 Kim, Dae-Hyun
A1 Song, Byungkyu
A1 Ahn, Hyun-a
A1 Ko, Woongjoon
A1 Do, Sunggeun
A1 Cho, Seokjin
A1 Kim, Kihan
A1 Oh, Seung-Hoon
A1 Joo, Hye-Yoon
A1 Park, Geuntae
A1 Jang, Jin-Hun
A1 Kim, Yong-Hun
A1 Lee, Donghun
A1 Jung, Jaehoon
A1 Kwon, Yongmin
A1 Kim, Youngjae
A1 Jung, Jaewoo
A1 O, Seongil
A1 Lee, Seoulmin
A1 Lim, Jaeseong
A1 Son, Junho
A1 Min, Jisu
A1 Do, Haebin
A1 Yoon, Jaejun
A1 Hwang, Isak
A1 Park, Jinsol
A1 Shim, Hong
A1 Yoon, Seryeong
A1 Choi, Dongyeong
A1 Lee, Jihoon
A1 Woo, Soohan
A1 Hong, Eunki
A1 Choi, Junha
A1 Kim, Jae-Sung
A1 Han, Sangkeun
A1 Bang, Jongmin
A1 Park, Bokgue
A1 Kim, Janghoo
A1 Choi, Seouk-Kyu
A1 Han, Gong-Heum
A1 Sung, Yoo-Chang
A1 Bae, Won-Il
A1 Lim, Jeong-Don
A1 Lee, Seungjae
A1 Yoo, Changsik
A1 Hwang, Sang Joon
A1 Lee, Jooyoung
YR 2022
SN 2376-8606
K1 Training
K1 Fabrication
K1 Conferences
K1 Voltage
K1 Receivers
K1 Calibration
K1 SDRAM
SP 448
OP 450
LK http://dx.doi.org/https://doi.org/10.1109/ISSCC42614.2022.9731537
DO https://doi.org/10.1109/ISSCC42614.2022.9731537
SF ELIB - SuUB Bremen

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