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A 1-Tb Density 4b/Cell 3D-NAND Flash on 176-Tier Technology..:

, In: 2022 IEEE International Solid- State Circuits Conference (ISSCC),

Pekny, Ted ; Vu, Luyen ; Tsai, Jeff... - p. 1-3 , 2022

Link: https://doi.org/10.1109/ISSCC42614.2022.9731691

RT 
T1 <cTitle>2022 IEEE International Solid- State Circuits Conference (ISSCC)</cTitle>: T1 <Title>A 1-Tb Density 4b/Cell 3D-NAND Flash on 176-Tier Technology with 4-Independent Planes for Read using CMOS-Under-the-Array</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9731691&Exemplar=1&LAN=DE
				
A1 Pekny, Ted
A1 Vu, Luyen
A1 Tsai, Jeff
A1 Srinivasan, Dheeraj
A1 Yu, Erwin
A1 Pabustan, Jonathan
A1 Xu, Joe
A1 Deshmukh, Srinivas
A1 Chan, Kim-Fung
A1 Piccardi, Michael
A1 Xu, Kevin
A1 Wang, Guan
A1 Shakeri, Kaveh
A1 Patel, Vipul
A1 Iwasaki, Tomoko
A1 Wang, Tongji
A1 Musunuri, Padma
A1 Gu, Carl
A1 Mohammadzadeh, Ali
A1 Ghalam, Ali
A1 Moschiano, Violante
A1 Vali, Tommaso
A1 Park, Jaekwan
A1 Lee, June
A1 Ghodsi, Ramin
YR 2022
SN 2376-8606
K1 Performance evaluation
K1 Concurrent computing
K1 Conferences
K1 Voltage
K1 Programming
K1 Throughput
K1 Reliability engineering
SP 1
OP 3
LK http://dx.doi.org/https://doi.org/10.1109/ISSCC42614.2022.9731691
DO https://doi.org/10.1109/ISSCC42614.2022.9731691
SF ELIB - SuUB Bremen

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