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1 Ergebnisse
1
Single Event Latchup Cross Section Calculation from TCAD Si..:
, In:
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
,
Guagliardo, S.
;
Wrobel, F.
;
Aguiar, Y.Q.
... - p. 01-05 , 2019
Link:
https://doi.org/10.1109/RADECS47380.2019.9745682
RT T1
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
: T1
Single Event Latchup Cross Section Calculation from TCAD Simulations - Effects of the Doping Profiles and Anode to Cathode Spacing
UL https://suche.suub.uni-bremen.de/peid=ieee-9745682&Exemplar=1&LAN=DE A1 Guagliardo, S. A1 Wrobel, F. A1 Aguiar, Y.Q. A1 Autran, J-L. A1 Leroux, P. A1 Saigne, F. A1 Pouget, V. A1 Touboul, A.D. YR 2019 SN 1609-0438 K1 Temperature sensors K1 Sensitivity K1 Single event latchup K1 Radiation hardening (electronics) K1 Europe K1 Doping profiles K1 Semiconductor process modeling K1 Single-Event Latchup K1 TCAD simulations K1 Cross section SP 01 OP 05 LK http://dx.doi.org/https://doi.org/10.1109/RADECS47380.2019.9745682 DO https://doi.org/10.1109/RADECS47380.2019.9745682 SF ELIB - SuUB Bremen
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