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1 Ergebnisse
1
Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN ..:
, In:
2022 IEEE International Reliability Physics Symposium (IRPS)
,
Lee, Jian-Hsing
;
Huang, Yeh-Jen
;
Hong, Li-Yang
... - p. 2B.3-1-2B.3-6 , 2022
Link:
https://doi.org/10.1109/IRPS48227.2022.9764596
RT T1
2022 IEEE International Reliability Physics Symposium (IRPS)
: T1
Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection
UL https://suche.suub.uni-bremen.de/peid=ieee-9764596&Exemplar=1&LAN=DE A1 Lee, Jian-Hsing A1 Huang, Yeh-Jen A1 Hong, Li-Yang A1 Chen, Li-Fan A1 Jou, Yeh-Ning A1 Lin, Shin-Cheng A1 Wohlmuth, Walter A1 Liao, Chih-Cherng A1 Li, Ching-Ho A1 Huang, Shoa-Chang A1 Chen, Ke-Horng YR 2022 SN 1938-1891 K1 Resistors K1 HEMTs K1 Logic gates K1 Electrostatic discharges K1 Transistors K1 MODFETs K1 Integrated circuit reliability K1 Electrostatic-Discharge (ESD) K1 High Electron Mobility Transistor (HEMT) K1 Human body Model (HBM) K1 Two-Dimensional Electron Gas (2D-EG) K1 Transmission-Line Pulse (TLP) SP 2B.3 OP 1-2B.3-6 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48227.2022.9764596 DO https://doi.org/10.1109/IRPS48227.2022.9764596 SF ELIB - SuUB Bremen
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