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1 Ergebnisse
1
6 Stacked Ge0.95Si0.05 nGAAFETs without Parasitic Channels ..:
, In:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
,
Cheng, Chun-Yi
;
Hsieh, Wan-Hsuan
;
Huang, Bo-Wei
... - p. 1-2 , 2022
Link:
https://doi.org/10.1109/VLSI-TSA54299.2022.9770969
RT T1 <cTitle>2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)</cTitle>: T1 <Title>6 Stacked Ge0.95Si0.05 nGAAFETs without Parasitic Channels by Wet Etching</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9770969&Exemplar=1&LAN=DE A1 Cheng, Chun-Yi A1 Hsieh, Wan-Hsuan A1 Huang, Bo-Wei A1 Liu, Yi-Chun A1 Tu, Chien-Te A1 Tsai, Chung-En A1 Chueh, Shee-Jier A1 Chen, Guan-Hua A1 Liu, C. W. YR 2022 K1 Resistance K1 Wet etching K1 Thermal expansion K1 Three-dimensional displays K1 Tensile strain K1 Very large scale integration K1 Ions SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSI-TSA54299.2022.9770969 DO https://doi.org/10.1109/VLSI-TSA54299.2022.9770969 SF ELIB - SuUB Bremen
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