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Statistical 3D Device Simulation of Full Fluctuations of Ga..:
, In:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
,
Kola, Sekhar Reddy
;
Li, Yiming
;
Chen, Chieh-Yang
. - p. 1-2 , 2022
Link:
https://doi.org/10.1109/VLSI-TSA54299.2022.9771002
RT T1
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
: T1
Statistical 3D Device Simulation of Full Fluctuations of Gate-All-Around Silicon Nanosheet MOSFETs at Sub-3-nm Technology Nodes
UL https://suche.suub.uni-bremen.de/peid=ieee-9771002&Exemplar=1&LAN=DE A1 Kola, Sekhar Reddy A1 Li, Yiming A1 Chen, Chieh-Yang A1 Chuang, Min-Hui YR 2022 K1 MOSFET K1 Solid modeling K1 Fluctuations K1 Three-dimensional displays K1 Gallium arsenide K1 Silicon K1 Resource description framework SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSI-TSA54299.2022.9771002 DO https://doi.org/10.1109/VLSI-TSA54299.2022.9771002 SF ELIB - SuUB Bremen
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