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1 Ergebnisse
1
Development of Highly Manufacturable, Reliable, and Energy-..:
, In:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
,
Rahaman, S. Z.
;
Chang, Y.-J.
;
Hsin, Y.-C.
... - p. 1-2 , 2022
Link:
https://doi.org/10.1109/VLSI-TSA54299.2022.9771005
RT T1 <cTitle>2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)</cTitle>: T1 <Title>Development of Highly Manufacturable, Reliable, and Energy-Efficient Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM)</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9771005&Exemplar=1&LAN=DE A1 Rahaman, S. Z. A1 Chang, Y.-J. A1 Hsin, Y.-C. A1 Yang, S.-Y. A1 Chen, F.-M. A1 Chen, K.-M. A1 Wang, I-J. A1 Lee, H.-H. A1 Chen, G.-L. A1 Su, Y.-H. A1 Shih, C.-Y. A1 Chiu, S.-C. A1 Wei, J.-H. A1 Yen, S.-C. A1 Huang, K.-C. A1 Chen, C.-C. A1 Chen, M.-C. A1 Sheu, S.-S. A1 Lo, W.-C. A1 Chang, S.-Z. A1 See, Y.-C. A1 Deng, D.-L. A1 Wu, C.-I YR 2022 K1 Resistance K1 Annealing K1 Magnetic multilayers K1 Semiconductor device reliability K1 Switches K1 Magnetic moments K1 Magnetic hysteresis SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSI-TSA54299.2022.9771005 DO https://doi.org/10.1109/VLSI-TSA54299.2022.9771005 SF ELIB - SuUB Bremen
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