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1 Ergebnisse
1
Characterization of Double HfZrO2 based FeFET toward Low-Vo..:
, In:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
,
Lou, Z.-F.
;
Liao, C.-Y.
;
Hsiang, K.-Y.
... - p. 1-2 , 2022
Link:
https://doi.org/10.1109/VLSI-TSA54299.2022.9771012
RT T1
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
: T1
Characterization of Double HfZrO2 based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory
UL https://suche.suub.uni-bremen.de/peid=ieee-9771012&Exemplar=1&LAN=DE A1 Lou, Z.-F. A1 Liao, C.-Y. A1 Hsiang, K.-Y. A1 Lin, C.-Y. A1 Lin, Y.-D. A1 Yeh, P.-C. A1 Wang, C.-Y. A1 Yang, H.-Y. A1 Tzeng, P.-J. A1 Hou, T.-H. A1 Tang, Y.-T. A1 Lee, M. H. YR 2022 K1 Low voltage K1 Power demand K1 Nonvolatile memory K1 Memory management K1 Voltage K1 Very large scale integration K1 FeFETs K1 Double HZO K1 ferroelectric K1 FeFET SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSI-TSA54299.2022.9771012 DO https://doi.org/10.1109/VLSI-TSA54299.2022.9771012 SF ELIB - SuUB Bremen
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