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1 Ergebnisse
1
Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacit..:
, In:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
,
Huang, Tz-Shiuan
;
Yeh, Po-Chun
;
Yang, Hsin-Yun
... - p. 1-2 , 2022
Link:
https://doi.org/10.1109/VLSI-TSA54299.2022.9771032
RT T1
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
: T1
Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacitor Using Low-Temperature Back-End-of-Line Compatible 40°C Annealing
UL https://suche.suub.uni-bremen.de/peid=ieee-9771032&Exemplar=1&LAN=DE A1 Huang, Tz-Shiuan A1 Yeh, Po-Chun A1 Yang, Hsin-Yun A1 Lin, Yu-De A1 Tzeng, Pei-Jer A1 Sheu, Shyh-Shyuan A1 Lo, Wei-Chung A1 Wu, Chih-I A1 Hou, Tuo-Hung YR 2022 K1 Temperature measurement K1 Performance evaluation K1 Annealing K1 Zirconium K1 Scalability K1 Current measurement K1 Capacitors SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSI-TSA54299.2022.9771032 DO https://doi.org/10.1109/VLSI-TSA54299.2022.9771032 SF ELIB - SuUB Bremen
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