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1 Ergebnisse
1
Gate Driver Development and Stray Inductance Extraction of ..:
, In:
2022 IEEE Applied Power Electronics Conference and Exposition (APEC)
,
Guo, Zhehui
;
Li, Hui
;
Peng, Fang Z.
.. - p. 1387-1393 , 2022
Link:
https://doi.org/10.1109/APEC43599.2022.9773466
RT T1
2022 IEEE Applied Power Electronics Conference and Exposition (APEC)
: T1
Gate Driver Development and Stray Inductance Extraction of 10 kV SiC MOSFET Module for a Switched-Capacitor MMC Application
UL https://suche.suub.uni-bremen.de/peid=ieee-9773466&Exemplar=1&LAN=DE A1 Guo, Zhehui A1 Li, Hui A1 Peng, Fang Z. A1 Steurer, Michael A1 Olejniczak, Kraig J. YR 2022 SN 2470-6647 K1 Inductance K1 MOSFET K1 Insulation K1 Silicon carbide K1 Power supplies K1 Switches K1 Capacitance K1 10 kV SiC MOSEFT K1 power module K1 gate driver (GD) K1 gate driver power supply (GDPS) K1 common-mode transient immunity (CMTI) K1 CM capacitance K1 stray inductance extraction K1 short-circuit protection SP 1387 OP 1393 LK http://dx.doi.org/https://doi.org/10.1109/APEC43599.2022.9773466 DO https://doi.org/10.1109/APEC43599.2022.9773466 SF ELIB - SuUB Bremen
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