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Study on Y2O3 based gate oxide Si MOS with various annealin..:
, In:
2022 8th International Conference on Applied System Innovation (ICASI)
,
Yen, Chih-Feng
;
Hsu, Hung-Chang
;
Huang, Yu-Ya
. - p. 111-114 , 2022
Link:
https://doi.org/10.1109/ICASI55125.2022.9774449
RT T1
2022 8th International Conference on Applied System Innovation (ICASI)
: T1
Study on Y2O3 based gate oxide Si MOS with various annealing ambient
UL https://suche.suub.uni-bremen.de/peid=ieee-9774449&Exemplar=1&LAN=DE A1 Yen, Chih-Feng A1 Hsu, Hung-Chang A1 Huang, Yu-Ya A1 Tsao, Shen-Hao YR 2022 SN 2768-4156 K1 Technological innovation K1 Annealing K1 Liquids K1 Vapor deposition K1 II-VI semiconductor materials K1 Doping K1 Tunneling K1 Yttrium oxide K1 ZnO doped Y2O3 K1 MOS capacitor K1 Liquid phase deposition K1 High-k material SP 111 OP 114 LK http://dx.doi.org/https://doi.org/10.1109/ICASI55125.2022.9774449 DO https://doi.org/10.1109/ICASI55125.2022.9774449 SF ELIB - SuUB Bremen
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