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1 Ergebnisse
1
HV 65V nLDMOSs Engineering of ESD Enhancement by the Drain ..:
, In:
2022 8th International Conference on Applied System Innovation (ICASI)
,
Liu, Zhi-Wei
;
Chen, Shen-Li
;
Lai, Jhong-Yi
.. - p. 46-49 , 2022
Link:
https://doi.org/10.1109/ICASI55125.2022.9774475
RT T1 <cTitle>2022 8th International Conference on Applied System Innovation (ICASI)</cTitle>: T1 <Title>HV 65V nLDMOSs Engineering of ESD Enhancement by the Drain Side with Parasitic SCR Modulations</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9774475&Exemplar=1&LAN=DE A1 Liu, Zhi-Wei A1 Chen, Shen-Li A1 Lai, Jhong-Yi A1 Chung, Yu-Jie A1 Mai, Xing-Chen YR 2022 SN 2768-4156 K1 Thyristors K1 Technological innovation K1 Electric breakdown K1 Modulation K1 Doping K1 Electrostatic discharges K1 Discharges (electric) K1 electrostatic discharge(ESD) K1 laterally-diffused metal-oxide semiconductor(LDMOS) K1 silicon controlled rectifier(SCR) K1 secondary breakdown current(It2) K1 transmission line pulse(TLP) SP 46 OP 49 LK http://dx.doi.org/https://doi.org/10.1109/ICASI55125.2022.9774475 DO https://doi.org/10.1109/ICASI55125.2022.9774475 SF ELIB - SuUB Bremen
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