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50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO..:

, In: International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224),

Hergenrother, J.M. ; Wilk, G.D. ; Nigam, T.... - p. 3.1.1-3.1.4 , 2001

Link: https://doi.org/10.1109/IEDM.2001.979400

RT 
T1 <cTitle>International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)</cTitle>: T1 <Title>50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO/sub 2/ and Al/sub 2/O/sub 3/ gate dielectrics</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-979400&Exemplar=1&LAN=DE
				
A1 Hergenrother, J.M.
A1 Wilk, G.D.
A1 Nigam, T.
A1 Klemens, F.P.
A1 Monroe, D.
A1 Silverman, P.J.
A1 Sorsch, T.W.
A1 Busch, B.
A1 Green, M.L.
A1 Baker, M.R.
A1 Boone, T.
A1 Bude, M.K.
A1 Ciampa, N.A.
A1 Ferry, E.J.
A1 Fiory, A.T.
A1 Hillenius, S.J.
A1 Jacobson, D.C.
A1 Johnson, R.W.
A1 Kalavade, P.
A1 Keller, R.C.
A1 King, C.A.
A1 Kornblit, A.
A1 Krautter, H.W.
A1 Lee, J.T.-C.
A1 Mansfield, W.M.
A1 Miner, J.F.
A1 Morris, M.D.
A1 Oh, S.-H.
A1 Rosamilia, J.M.
A1 Sapjeta, B.J.
A1 Short, K.
A1 Steiner, K.
A1 Muller, D.A.
A1 Voyles, P.M.
A1 Grazul, J.L.
A1 Shero, E.J.
A1 Givens, M.E.
A1 Pomarede, C.
A1 Mazanec, M.
A1 Werkhoven, C.
YR 2001
K1 Reluctance generators
K1 Hafnium oxide
K1 Dielectrics
K1 Geometry
K1 Atomic layer deposition
K1 Chemical vapor deposition
K1 Electrodes
K1 MOSFET circuits
K1 Leakage current
K1 Gate leakage
SP 3.1.1
OP 3.1.4
LK http://dx.doi.org/https://doi.org/10.1109/IEDM.2001.979400
DO https://doi.org/10.1109/IEDM.2001.979400
SF ELIB - SuUB Bremen

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