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1 Ergebnisse
1
Cost-effective high-performance high-voltage SiGe:C HBTs wi..:
, In:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)
,
Heinemann, B.
;
Kruger, D.
;
Kurps, R.
... - p. 15.6.1-15.6.4 , 2001
Link:
https://doi.org/10.1109/IEDM.2001.979509
RT T1 <cTitle>International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)</cTitle>: T1 <Title>Cost-effective high-performance high-voltage SiGe:C HBTs with 100 GHz f/sub T/ and BV/sub CEO/ /spl times/ f/sub T/ products exceeding 220 VGHz</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-979509&Exemplar=1&LAN=DE A1 Heinemann, B. A1 Kruger, D. A1 Kurps, R. A1 Rucker, H. A1 Schley, P. A1 Winkler, W. A1 Wulf, H.-E. A1 Knoll, D. A1 Barth, R. A1 Bolze, D. A1 Blum, K. A1 Drews, J. A1 Ehwald, K.-E. A1 Fischer, G.G. A1 Kopke, K. YR 2001 K1 Heterojunction bipolar transistors K1 Voltage K1 Isolation technology K1 BiCMOS integrated circuits K1 CMOS technology K1 Diffusion tensor imaging K1 Frequency K1 System-on-a-chip K1 Silicon germanium K1 Germanium silicon alloys SP 15.6.1 OP 15.6.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM.2001.979509 DO https://doi.org/10.1109/IEDM.2001.979509 SF ELIB - SuUB Bremen
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