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1 Ergebnisse
1
BEOL Integrated Ferroelectric HfO2 based Capacitors for FeR..:
, In:
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Alcala, R.
;
Materano, M.
;
Lomenzo, P.D.
... - p. 67-69 , 2022
Link:
https://doi.org/10.1109/EDTM53872.2022.9798048
RT T1 <cTitle>2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)</cTitle>: T1 <Title>BEOL Integrated Ferroelectric HfO2 based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9798048&Exemplar=1&LAN=DE A1 Alcala, R. A1 Materano, M. A1 Lomenzo, P.D. A1 Grenouillet, L. A1 Francois, T. A1 Coignus, J. A1 Vaxelaire, N. A1 Carabasse, C. A1 Chevalliez, S. A1 Andrieu, F. A1 Mikolajick, T. A1 Schroeder, U. YR 2022 K1 Nonvolatile memory K1 Ferroelectric films K1 Capacitors K1 Semiconductor device reliability K1 Random access memory K1 Fatigue K1 Silicon K1 HfO2 K1 Ferroelectric and BEOL SP 67 OP 69 LK http://dx.doi.org/https://doi.org/10.1109/EDTM53872.2022.9798048 DO https://doi.org/10.1109/EDTM53872.2022.9798048 SF ELIB - SuUB Bremen
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