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1
Deep Learning Approach to Estimating Work Function Fluctuat..:
, In:
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Butola, Rajat
;
Li, Yiming
;
Kola, Sekhar Reddy
- p. 232-234 , 2022
Link:
https://doi.org/10.1109/EDTM53872.2022.9798172
RT T1 <cTitle>2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)</cTitle>: T1 <Title>Deep Learning Approach to Estimating Work Function Fluctuation of Gate-All-Around Silicon Nanosheet MOSFETs with A Ferroelectric HZO Layer</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9798172&Exemplar=1&LAN=DE A1 Butola, Rajat A1 Li, Yiming A1 Kola, Sekhar Reddy YR 2022 K1 Semiconductor device modeling K1 MOSFET K1 Fluctuations K1 Gallium arsenide K1 Neurons K1 Artificial neural networks K1 Predictive models K1 deep learning K1 artificial neural network K1 work function fluctuation K1 gate-all-around K1 nanosheet K1 ferroelectric layer K1 HZO K1 MOSFETs SP 232 OP 234 LK http://dx.doi.org/https://doi.org/10.1109/EDTM53872.2022.9798172 DO https://doi.org/10.1109/EDTM53872.2022.9798172 SF ELIB - SuUB Bremen
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