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1 Ergebnisse
1
High temperature performance of 6500V 4H-SiC MOSFET With em..:
, In:
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Chen, Hang
;
Zhang, Yourun
;
Luo, Maojiu
... - p. 198-200 , 2022
Link:
https://doi.org/10.1109/EDTM53872.2022.9798229
RT T1
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
: T1
High temperature performance of 6500V 4H-SiC MOSFET With embedded schottky barrier diode
UL https://suche.suub.uni-bremen.de/peid=ieee-9798229&Exemplar=1&LAN=DE A1 Chen, Hang A1 Zhang, Yourun A1 Luo, Maojiu A1 Li, Shiyan A1 He, Peng A1 Bai, Song A1 Zhang, Bo YR 2022 K1 Performance evaluation K1 MOSFET K1 Schottky diodes K1 Temperature K1 Costs K1 Silicon carbide K1 Schottky barriers K1 SiC MOSFET K1 embedded schottky K1 body-diode K1 temperature SP 198 OP 200 LK http://dx.doi.org/https://doi.org/10.1109/EDTM53872.2022.9798229 DO https://doi.org/10.1109/EDTM53872.2022.9798229 SF ELIB - SuUB Bremen
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