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1 Ergebnisse
1
Extremely- Scaled Channel Thickness ZnO FET with High Mobil..:
, In:
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Chand, Umesh
;
Chun-Kuei, Chen
;
Lal, Manohar
... - p. 256-258 , 2022
Link:
https://doi.org/10.1109/EDTM53872.2022.9798261
RT T1 <cTitle>2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)</cTitle>: T1 <Title>Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9798261&Exemplar=1&LAN=DE A1 Chand, Umesh A1 Chun-Kuei, Chen A1 Lal, Manohar A1 Hooda, Sonu A1 Veluri, Hasita A1 Fang, Zihang A1 Tsai, Shih-Hao A1 Thean, Aaron Voon-Yew YR 2022 K1 Annealing K1 X-ray scattering K1 II-VI semiconductor materials K1 Field effect transistors K1 Logic gates K1 Benchmark testing K1 Zinc oxide K1 low thermal budget K1 oxide FET K1 ILD SP 256 OP 258 LK http://dx.doi.org/https://doi.org/10.1109/EDTM53872.2022.9798261 DO https://doi.org/10.1109/EDTM53872.2022.9798261 SF ELIB - SuUB Bremen
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