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1 Ergebnisse
1
Investigation of Ge channel Complemental Field Effect Trans..:
, In:
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Hong, Tzu-Chieh
;
Yu, Sin-Ren
;
Su, Chun-Jung
.. - p. 244-246 , 2022
Link:
https://doi.org/10.1109/EDTM53872.2022.9798293
RT T1 <cTitle>2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)</cTitle>: T1 <Title>Investigation of Ge channel Complemental Field Effect Transistors (CFETs) Stacked Epitaxy or Layer Transfer</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9798293&Exemplar=1&LAN=DE A1 Hong, Tzu-Chieh A1 Yu, Sin-Ren A1 Su, Chun-Jung A1 Lee, Yao-Jen A1 Chao, Tien-Sheng YR 2022 K1 Fabrication K1 Costs K1 Field effect transistors K1 Germanium K1 Etching K1 Epitaxial growth K1 Complemental Field Effect Transistors (CFETs) K1 Ge/Si Stacks K1 Layer Transfer and high channel mobility SP 244 OP 246 LK http://dx.doi.org/https://doi.org/10.1109/EDTM53872.2022.9798293 DO https://doi.org/10.1109/EDTM53872.2022.9798293 SF ELIB - SuUB Bremen
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