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Photodetection characterization of SPADs fabricated in 0.35..:
, In:
2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO)
,
Poushi, S. S. Kohneh
;
Mahmoudi, H.
;
Hofbauer, M.
.. - p. 230-234 , 2022
Link:
https://doi.org/10.23919/MIPRO55190.2022.9803795
RT T1
2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO)
: T1
Photodetection characterization of SPADs fabricated in 0.35µm PIN photodiode and high voltage CMOS technologies
UL https://suche.suub.uni-bremen.de/peid=ieee-9803795&Exemplar=1&LAN=DE A1 Poushi, S. S. Kohneh A1 Mahmoudi, H. A1 Hofbauer, M. A1 Dervic, A. A1 Zimmermann, H. YR 2022 SN 2623-8764 K1 Semiconductor device modeling K1 Performance evaluation K1 Voltage K1 Doping profiles K1 CMOS process K1 Semiconductor process modeling K1 Electric fields K1 Single-photon avalanche diode (SPAD) K1 Photon detection probability (PDP) K1 Electric field distribution SP 230 OP 234 LK http://dx.doi.org/https://doi.org/10.23919/MIPRO55190.2022.9803795 DO https://doi.org/10.23919/MIPRO55190.2022.9803795 SF ELIB - SuUB Bremen
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