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1 Ergebnisse
1
Robust HV Power pLDMOS Components for ESD Protection by the..:
, In:
2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)
,
Chen, Shen-Li
;
Hong, Shi-Zhe
;
Chen, Wei-Jung
- p. 1152-1156 , 2022
Link:
https://doi.org/10.23919/IPEC-Himeji2022-ECCE53331.202..
RT T1 <cTitle>2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)</cTitle>: T1 <Title>Robust HV Power pLDMOS Components for ESD Protection by the Drain-side Parasitic Schottky Diode and SCR Engineering</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9806937&Exemplar=1&LAN=DE A1 Chen, Shen-Li A1 Hong, Shi-Zhe A1 Chen, Wei-Jung YR 2022 K1 Resistance K1 Breakdown voltage K1 Schottky diodes K1 Voltage measurement K1 Electric breakdown K1 Modulation K1 Metals K1 Electrostatic discharge (ESD) K1 Holding voltage (Vh) K1 Latch-up (LU) K1 P-channel lateral-diffused metal oxide semiconductor (pLDMOS) K1 Secondary breakdown current (It2) K1 Transmission-line pulse (TLP) K1 Trigger voltage (Vt1) SP 1152 OP 1156 LK http://dx.doi.org/https://doi.org/10.23919/IPEC-Himeji2022-ECCE53331.2022.9806937 DO https://doi.org/10.23919/IPEC-Himeji2022-ECCE53331.2022.9806937 SF ELIB - SuUB Bremen
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