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1 Ergebnisse
1
Performance Assessment of InGaN Double Gate Stack-Oxide MOS..:
, In:
2022 IEEE VLSI Device Circuit and System (VLSI DCS)
,
Kumar, Ajay
;
Sen, Dipanjan
;
Sinha, Soumendu
- p. 24-27 , 2022
Link:
https://doi.org/10.1109/VLSIDCS53788.2022.9811478
RT T1
2022 IEEE VLSI Device Circuit and System (VLSI DCS)
: T1
Performance Assessment of InGaN Double Gate Stack-Oxide MOSFET based Phosphine Gas Sensor: A Catalytic Metal Gate Approach
UL https://suche.suub.uni-bremen.de/peid=ieee-9811478&Exemplar=1&LAN=DE A1 Kumar, Ajay A1 Sen, Dipanjan A1 Sinha, Soumendu YR 2022 K1 Semiconductor device modeling K1 MOSFET K1 Sensitivity K1 Metals K1 Logic gates K1 Very large scale integration K1 Threshold voltage K1 Double Gate K1 Stack Oxide K1 Catalytic Metal Gate K1 Phosphine Gas Sensor K1 Channel Materials SP 24 OP 27 LK http://dx.doi.org/https://doi.org/10.1109/VLSIDCS53788.2022.9811478 DO https://doi.org/10.1109/VLSIDCS53788.2022.9811478 SF ELIB - SuUB Bremen
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