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1 Ergebnisse
1
Temperature Dependence on Fin-FET Electrical Parameters for..:
, In:
2022 IEEE VLSI Device Circuit and System (VLSI DCS)
,
Singh, Salini
;
Roy, Bhaskar
;
Billaha, Md. Aref
.. - p. 46-49 , 2022
Link:
https://doi.org/10.1109/VLSIDCS53788.2022.9811493
RT T1
2022 IEEE VLSI Device Circuit and System (VLSI DCS)
: T1
Temperature Dependence on Fin-FET Electrical Parameters for Al2O3 and HfO2 Dielectric Materials: A Comparative Study
UL https://suche.suub.uni-bremen.de/peid=ieee-9811493&Exemplar=1&LAN=DE A1 Singh, Salini A1 Roy, Bhaskar A1 Billaha, Md. Aref A1 Dutta, Ritam A1 Choudhary, Santosh K. YR 2022 K1 Temperature sensors K1 Performance evaluation K1 Temperature dependence K1 Field effect transistors K1 Logic gates K1 Very large scale integration K1 Threshold voltage K1 Fin-FET K1 DIBL K1 GIDL K1 ALD K1 CMOS SP 46 OP 49 LK http://dx.doi.org/https://doi.org/10.1109/VLSIDCS53788.2022.9811493 DO https://doi.org/10.1109/VLSIDCS53788.2022.9811493 SF ELIB - SuUB Bremen
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