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1 Ergebnisse
1
750V Narrow Mesa IGBT vs SJ-IGBT: Performance and SC-SOA As..:
, In:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Ngwendson, L.
;
Kong, C.
;
Gupta, S.
... - p. 237-240 , 2022
Link:
https://doi.org/10.1109/ISPSD49238.2022.9813608
RT T1 <cTitle>2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>750V Narrow Mesa IGBT vs SJ-IGBT: Performance and SC-SOA Assessment</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9813608&Exemplar=1&LAN=DE A1 Ngwendson, L. A1 Kong, C. A1 Gupta, S. A1 Su, A. A1 Wang, Y. A1 Qin, M. A1 Xiao, Q. A1 Luo, H. A1 Ning, X. A1 Yao, Y. A1 Trajkovic, T. A1 Udrea, F. A1 Pathirana, V. A1 Chan, C. A1 Udugampola, N. YR 2022 SN 1946-0201 K1 Insulated gate bipolar transistors K1 Performance evaluation K1 Integrated circuits K1 Switching loss K1 Switches K1 Robustness K1 Power semiconductor devices SP 237 OP 240 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD49238.2022.9813608 DO https://doi.org/10.1109/ISPSD49238.2022.9813608 SF ELIB - SuUB Bremen
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