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Role of free holes in nBTI degradation in GaN-on-Si MOS-cha..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Vandendaele, W. ; Jaud, M.-A. ; Viey, A. G.... - p. 345-348 , 2022
Link: https://doi.org/10.1109/ISPSD49238.2022.9813613