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1 Ergebnisse
1
On the physics link between time-dependent gate breakdown a..:
, In:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Tang, Xi
;
Liu, Yuhan
;
Wang, Huan
... - p. 57-60 , 2022
Link:
https://doi.org/10.1109/ISPSD49238.2022.9813615
RT T1 <cTitle>2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>On the physics link between time-dependent gate breakdown and electroluminescence in Schottky-type p-GaN gate HEMTs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9813615&Exemplar=1&LAN=DE A1 Tang, Xi A1 Liu, Yuhan A1 Wang, Huan A1 Dong, Dan A1 Yin, Yulian A1 Lin, Yan A1 Li, Haoran A1 Chen, Pingfan A1 Li, Hui A1 Huang, Zhen A1 Cao, Wenping A1 Li, Baikui A1 Hu, Cungang YR 2022 SN 1946-0201 K1 Degradation K1 Electrodes K1 Electric breakdown K1 PIN photodiodes K1 Logic gates K1 HEMTs K1 Electroluminescence K1 Schottky-type p-GaN gate HEMTs K1 time-dependent gate breakdown K1 electroluminescence K1 two-stage degradation SP 57 OP 60 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD49238.2022.9813615 DO https://doi.org/10.1109/ISPSD49238.2022.9813615 SF ELIB - SuUB Bremen
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