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1 Ergebnisse
1
Optimisation of the carrier lifetime profile in 1.2kV plana..:
, In:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Naydenov, K.
;
Donato, N.
;
Udrea, F.
... - p. 233-236 , 2022
Link:
https://doi.org/10.1109/ISPSD49238.2022.9813631
RT T1 <cTitle>2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Optimisation of the carrier lifetime profile in 1.2kV planar and trench SiC MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9813631&Exemplar=1&LAN=DE A1 Naydenov, K. A1 Donato, N. A1 Udrea, F. A1 Mihaila, A. A1 Romano, G. A1 Wirths, S. A1 Knoll, L. YR 2022 SN 1946-0201 K1 Degradation K1 Semiconductor device modeling K1 MOSFET K1 Silicon carbide K1 PIN photodiodes K1 Voltage K1 Semiconductor diodes K1 SiC MOSFET K1 lifetime killing K1 bipolar degradation K1 reverse recovery K1 TCAD device modelling SP 233 OP 236 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD49238.2022.9813631 DO https://doi.org/10.1109/ISPSD49238.2022.9813631 SF ELIB - SuUB Bremen
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