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1 Ergebnisse
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Implementation of a short channel (0.3 μm) for 4H-SiC MOSFE..:
, In:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Kim, Dongyoung
;
Jang, Seung Yup
;
Morgan, Adam J.
. - p. 217-220 , 2022
Link:
https://doi.org/10.1109/ISPSD49238.2022.9813633
RT T1 <cTitle>2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Implementation of a short channel (0.3 μm) for 4H-SiC MOSFETs with deep P-well using 'channeling' implantation</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9813633&Exemplar=1&LAN=DE A1 Kim, Dongyoung A1 Jang, Seung Yup A1 Morgan, Adam J. A1 Sung, Woongje YR 2022 SN 1946-0201 K1 Integrated circuits K1 MOSFET K1 Semiconductor device measurement K1 Silicon carbide K1 Current measurement K1 Power semiconductor devices K1 Leakage currents K1 4H-SiC K1 MOSFETs K1 Short channel K1 Breakdown voltage K1 Short-circuit capability K1 Channeling implantation K1 Specific on-resistance K1 Deep P-well SP 217 OP 220 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD49238.2022.9813633 DO https://doi.org/10.1109/ISPSD49238.2022.9813633 SF ELIB - SuUB Bremen
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