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1 Ergebnisse
1
Split-Dummy-Active CSTBT™ for Improving Recovery dV/dt and ..:
, In:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Konishi, Kazuya
;
Nishi, Koichi
;
Sako, Kohei
. - p. 273-276 , 2022
Link:
https://doi.org/10.1109/ISPSD49238.2022.9813634
RT T1 <cTitle>2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Split-Dummy-Active CSTBT™ for Improving Recovery dV/dt and Turn-on Switching Loss Tradeoff</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9813634&Exemplar=1&LAN=DE A1 Konishi, Kazuya A1 Nishi, Koichi A1 Sako, Kohei A1 Furukawa, Akihiko YR 2022 SN 1946-0201 K1 Insulated gate bipolar transistors K1 Integrated circuits K1 Electrodes K1 Switching loss K1 Logic gates K1 Capacitance K1 Power semiconductor devices K1 IGBT K1 CSTBT K1 Gate capacitance K1 Split-gate K1 Recovery dV/dt K1 Turn-on switching loss SP 273 OP 276 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD49238.2022.9813634 DO https://doi.org/10.1109/ISPSD49238.2022.9813634 SF ELIB - SuUB Bremen
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