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1 Ergebnisse
1
A Pathway to Improve the Reliability of p-GaN Gate HEMTs th..:
, In:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Hwang, Injun
;
Jeon, Woochul
;
Hwang, Sun-Kyu
... - p. 61-64 , 2022
Link:
https://doi.org/10.1109/ISPSD49238.2022.9813649
RT T1 <cTitle>2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>A Pathway to Improve the Reliability of p-GaN Gate HEMTs through Buffer Hole Accumulation</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9813649&Exemplar=1&LAN=DE A1 Hwang, Injun A1 Jeon, Woochul A1 Hwang, Sun-Kyu A1 Oh, Jaejoon A1 Kim, Joonyong A1 Park, Jun Hyuk A1 Kim, Boram A1 Kim, Jongseob YR 2022 SN 1946-0201 K1 Degradation K1 Semiconductor device measurement K1 Voltage measurement K1 Semiconductor device reliability K1 Logic gates K1 HEMTs K1 Integrated circuit reliability K1 Gallium nitride (GaN) K1 high-electron mobility transistors (HEMTs) K1 power transistor K1 semiconductor device reliability K1 transient voltage measurement K1 short circuit failure SP 61 OP 64 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD49238.2022.9813649 DO https://doi.org/10.1109/ISPSD49238.2022.9813649 SF ELIB - SuUB Bremen
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