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1 Ergebnisse
1
Terminal Breakdown Voltage Degradation by Avalanche Stress ..:
, In:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Fang, Dong
;
Lin, Zhiyu
;
Xiao, Kui
... - p. 141-144 , 2022
Link:
https://doi.org/10.1109/ISPSD49238.2022.9813651
RT T1 <cTitle>2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Terminal Breakdown Voltage Degradation by Avalanche Stress Induced Hot-Hole Injection in Split Gate Trench Power MOSFET</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9813651&Exemplar=1&LAN=DE A1 Fang, Dong A1 Lin, Zhiyu A1 Xiao, Kui A1 Qiao, Ming A1 Bian, Zheng A1 Liu, Wenliang A1 Yang, Guang A1 Ye, Jun A1 Zhang, Sen A1 Zhang, Bo YR 2022 SN 1946-0201 K1 Degradation K1 Semiconductor device modeling K1 Performance evaluation K1 MOSFET K1 Hot carriers K1 Logic gates K1 Power semiconductor devices K1 BV degradation K1 avalanche stress K1 hot-hole injection K1 SGT MOSFET K1 terminal mesa K1 design margin SP 141 OP 144 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD49238.2022.9813651 DO https://doi.org/10.1109/ISPSD49238.2022.9813651 SF ELIB - SuUB Bremen
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