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1 Ergebnisse
1
A High-voltage Silicon-On-Insulator Lateral IGBT with Segme..:
, In:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Zhang, Sen
;
Ma, Jie
;
Luo, Min
... - p. 309-312 , 2022
Link:
https://doi.org/10.1109/ISPSD49238.2022.9813658
RT T1 <cTitle>2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>A High-voltage Silicon-On-Insulator Lateral IGBT with Segmented Trenches for Improved Short circuit Ruggedness</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9813658&Exemplar=1&LAN=DE A1 Zhang, Sen A1 Ma, Jie A1 Luo, Min A1 Wang, Xiaona A1 He, Nailong A1 Song, Hua A1 Li, Sheng A1 Wei, Jiaxing A1 Liu, Siyang A1 Zhang, Long A1 Sun, Weifeng YR 2022 SN 1946-0201 K1 Insulated gate bipolar transistors K1 Electric potential K1 Modulation K1 Silicon-on-insulator K1 Metals K1 Integrated circuit interconnections K1 Voltage K1 SOI K1 lateral IGBT K1 LIGBT K1 SOI-LIGBT K1 segmented trench K1 potential modulation K1 low saturation current K1 Isat K1 short-circuit K1 ruggedness SP 309 OP 312 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD49238.2022.9813658 DO https://doi.org/10.1109/ISPSD49238.2022.9813658 SF ELIB - SuUB Bremen
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