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1
Gate Stress Study on SiN-Based SiC Power MOSFETs:
, In:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Wirths, Stephan
;
Alfieri, Giovanni
;
Romano, Gianpaolo
... - p. 245-248 , 2022
Link:
https://doi.org/10.1109/ISPSD49238.2022.9813671
RT T1 <cTitle>2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Gate Stress Study on SiN-Based SiC Power MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9813671&Exemplar=1&LAN=DE A1 Wirths, Stephan A1 Alfieri, Giovanni A1 Romano, Gianpaolo A1 Ceccarelli, Edoardo A1 Arango, Yulieth A1 Mihaila, Andrei A1 Knoll, Lars YR 2022 SN 1946-0201 K1 Integrated circuits K1 MOSFET K1 Silicon carbide K1 Logic gates K1 Threshold voltage K1 Power semiconductor devices K1 Kinetic theory K1 SiC power MOSFETs K1 wide band gap K1 SiC MOSFET reliability K1 bias temperature instabilities K1 threshold voltage stability SP 245 OP 248 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD49238.2022.9813671 DO https://doi.org/10.1109/ISPSD49238.2022.9813671 SF ELIB - SuUB Bremen
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