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Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits ..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Le Royer, C. ; Mohamad, B. ; Biscarrat, J.... - p. 49-52 , 2022

Link: https://doi.org/10.1109/ISPSD49238.2022.9813672

RT 
T1 <cTitle>2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9813672&Exemplar=1&LAN=DE
				
A1 Le Royer, C.
A1 Mohamad, B.
A1 Biscarrat, J.
A1 Vauche, L.
A1 Escoffier, R.
A1 Buckley, J.
A1 Becu, S.
A1 Riat, R.
A1 Gillot, C.
A1 Charles, M.
A1 Ruel, S.
A1 Pimenta-Barros, P.
A1 Posseme, N.
A1 Besson, P.
A1 Boudaa, F.
A1 Vannuffel, C.
A1 Vandendaele, W.
A1 Viey, A.G.
A1 Krakovinsky, A.
A1 Jaud, M.-A.
A1 Modica, R.
A1 Iucolano, F.
A1 Tiec, R. Le
A1 Levi, S.
A1 Orsatelli, M.
A1 Gwoziecki, R.
A1 Sousa, V.
YR 2022
SN 1946-0201
K1 Temperature dependence
K1 Switches
K1 Logic gates
K1 HEMTs
K1 Silicon
K1 Wide band gap semiconductors
K1 Transistors
K1 Power
K1 GaN-on-Si
K1 AlGaN/GaN
K1 MOSc HEMT
K1 fully recessed gate architecture
K1 200mm Si substrates
K1 ON state resistance
K1 650V application
K1 packaged devices
SP 49
OP 52
LK http://dx.doi.org/https://doi.org/10.1109/ISPSD49238.2022.9813672
DO https://doi.org/10.1109/ISPSD49238.2022.9813672
SF ELIB - SuUB Bremen

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