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1 Ergebnisse
1
Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits ..:
, In:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Le Royer, C.
;
Mohamad, B.
;
Biscarrat, J.
... - p. 49-52 , 2022
Link:
https://doi.org/10.1109/ISPSD49238.2022.9813672
RT T1
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture
UL https://suche.suub.uni-bremen.de/peid=ieee-9813672&Exemplar=1&LAN=DE A1 Le Royer, C. A1 Mohamad, B. A1 Biscarrat, J. A1 Vauche, L. A1 Escoffier, R. A1 Buckley, J. A1 Becu, S. A1 Riat, R. A1 Gillot, C. A1 Charles, M. A1 Ruel, S. A1 Pimenta-Barros, P. A1 Posseme, N. A1 Besson, P. A1 Boudaa, F. A1 Vannuffel, C. A1 Vandendaele, W. A1 Viey, A.G. A1 Krakovinsky, A. A1 Jaud, M.-A. A1 Modica, R. A1 Iucolano, F. A1 Tiec, R. Le A1 Levi, S. A1 Orsatelli, M. A1 Gwoziecki, R. A1 Sousa, V. YR 2022 SN 1946-0201 K1 Temperature dependence K1 Switches K1 Logic gates K1 HEMTs K1 Silicon K1 Wide band gap semiconductors K1 Transistors K1 Power K1 GaN-on-Si K1 AlGaN/GaN K1 MOSc HEMT K1 fully recessed gate architecture K1 200mm Si substrates K1 ON state resistance K1 650V application K1 packaged devices SP 49 OP 52 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD49238.2022.9813672 DO https://doi.org/10.1109/ISPSD49238.2022.9813672 SF ELIB - SuUB Bremen
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