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1 Ergebnisse
1
Normally-off β-Ga2O3 Power Heterojunction Field-Effect-Tran..:
, In:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Zhou, Xuanze
;
Liu, Qi
;
Hao, Weibing
.. - p. 101-104 , 2022
Link:
https://doi.org/10.1109/ISPSD49238.2022.9813678
RT T1 <cTitle>2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Normally-off β-Ga2O3 Power Heterojunction Field-Effect-Transistor Realized by p-NiO and Recessed-Gate</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9813678&Exemplar=1&LAN=DE A1 Zhou, Xuanze A1 Liu, Qi A1 Hao, Weibing A1 Xu, Guangwei A1 Long, Shibing YR 2022 SN 1946-0201 K1 Performance evaluation K1 Field effect transistors K1 Logic gates K1 Heterojunctions K1 Threshold voltage K1 Semiconductor diodes K1 Power semiconductor devices K1 β-Ga2O3 K1 NiO K1 HJFET K1 gate-recess K1 normally-off SP 101 OP 104 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD49238.2022.9813678 DO https://doi.org/10.1109/ISPSD49238.2022.9813678 SF ELIB - SuUB Bremen
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