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1 Ergebnisse
1
High-performance Reverse Blocking p-GaN HEMTs with Multi-co..:
, In:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Sun, Ruize
;
Wang, Fangzhou
;
Luo, Pan
... - p. 173-176 , 2022
Link:
https://doi.org/10.1109/ISPSD49238.2022.9813682
RT T1 <cTitle>2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>High-performance Reverse Blocking p-GaN HEMTs with Multi-column p-GaN/Schottky Alternate-island Drain</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9813682&Exemplar=1&LAN=DE A1 Sun, Ruize A1 Wang, Fangzhou A1 Luo, Pan A1 Xu, Wenjun A1 Wang, Yang A1 Liu, Chao A1 Chen, Wanjun A1 Zhang, Bo YR 2022 SN 1946-0201 K1 Performance evaluation K1 Integrated circuits K1 Electrodes K1 Electric potential K1 HEMTs K1 Logic gates K1 Power semiconductor devices K1 p-GaN HEMT K1 reverse blocking K1 low on-set voltage K1 low specific on-resistance K1 p-GaN/Schottky alternating-island SP 173 OP 176 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD49238.2022.9813682 DO https://doi.org/10.1109/ISPSD49238.2022.9813682 SF ELIB - SuUB Bremen
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