Titel

Merkliste
1 Ergebnisse

Evaluation of Reliability and Lifetime of 650-V GaN-on-Si P..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Yin, Shan ; Lin, Yiming ; Hao, Ronghui... - p. 93-96 , 2022

Link: https://doi.org/10.1109/ISPSD49238.2022.9813684

RT 
T1 <cTitle>2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Evaluation of Reliability and Lifetime of 650-V GaN-on-Si Power Devices Fabricated on 200-mm CMOS-Compatible Process Platform for High-Density Power Converter Application</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9813684&Exemplar=1&LAN=DE
				
A1 Yin, Shan
A1 Lin, Yiming
A1 Hao, Ronghui
A1 Jin, Shoudong
A1 He, Chuan
A1 Yao, Weigang
A1 Li, Xingjun
A1 He, Qingyuan
A1 Pu, Xiaoqing
A1 Su, Xiaoliang
A1 Zou, Yanbo
A1 Cai, Hui
A1 Lee, Kye-Jin
A1 Wang, Mike
A1 Guo, Harry
A1 Shen, Ke
A1 Wang, Felix
A1 Chiu, H.-C.
A1 Chen, Larry
A1 Marcon, Denis
A1 Wong, Roy K.-Y.
YR 2022
SN 1946-0201
K1 Temperature
K1 Semiconductor device reliability
K1 Switches
K1 Voltage
K1 HEMTs
K1 Stress
K1 Standards
K1 Acceleration factor
K1 dynamic on-resistance
K1 failure criteria
K1 GaN
K1 switching lifetime
SP 93
OP 96
LK http://dx.doi.org/https://doi.org/10.1109/ISPSD49238.2022.9813684
DO https://doi.org/10.1109/ISPSD49238.2022.9813684
SF ELIB - SuUB Bremen

Export

RefWorks (nur Desktop-Version!)
Flow (Zuerst in Flow einloggen, dann importieren)