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1 Ergebnisse
1
Physical Mechanism of Device Degradation & its Recovery Dyn..:
, In:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Pan, Chaowu
;
Zhou, Qi
;
Wu, Z.
... - p. 313-316 , 2022
Link:
https://doi.org/10.1109/ISPSD49238.2022.9813685
RT T1 <cTitle>2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Physical Mechanism of Device Degradation & its Recovery Dynamics of p-GaN Gate HEMTs Under Repetitive Short Circuit Stress</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9813685&Exemplar=1&LAN=DE A1 Pan, Chaowu A1 Zhou, Qi A1 Wu, Z. A1 Yang, N. A1 Bai, P. A1 Zhu, L. A1 Chen, K. A1 Mei, W. A1 Zhou, C. A1 Ming, X. A1 Zhang, B. YR 2022 SN 1946-0201 K1 Degradation K1 Performance evaluation K1 Electron traps K1 Logic gates K1 HEMTs K1 Threshold voltage K1 Power semiconductor devices K1 p-GaN gate HEMTs K1 repetitive short circuit K1 electrical characteristics degradation K1 recovery dynamics K1 electron trapping K1 hot electron SP 313 OP 316 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD49238.2022.9813685 DO https://doi.org/10.1109/ISPSD49238.2022.9813685 SF ELIB - SuUB Bremen
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